FDN339AN
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN339AN
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 500 mW 20 V Continuous Drain Current (ID):3 A 10 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 2.92 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 35 mΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 3 A |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 850 mV |
| Number of Channels | 1 |
| Input capacitance | 700 pF |
| Continuous Drain Current (ID) | 3 A |
| Rds On Max | 35 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 18 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 10 nC |
| Drain to Source Resistance | 29 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 850 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 400 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 10973
Distributors
pcbx
pcbxUnit Price$0.36334
Ext.Price$0.36334
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.36334 | $0.36334 |
| 10 | $0.26076 | $2.60760 |
| 50 | $0.21893 | $10.94650 |
| 100 | $0.18381 | $18.38100 |
| 500 | $0.14363 | $71.81500 |
| 1000 | $0.12397 | $123.97000 |
| 3000 | $0.09490 | $284.70000 |
| 5000 | $0.08446 | $422.30000 |